Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
Lithium-ion electrolytic substrates for sub-1V high-performance transition metal dichalcogenide transistors and amplifiers
复制标题
DOI：
10.1038/s41467-020-17006-w
复制
发表时间：
2020-06-24
影响因子：
16.6
通讯作者：
Akinwande, Deji
中科院分区：
文献类型：
--
作者：
Alam, Md Hasibul;Xu, Zifan;Akinwande, Deji
二维（2D）材料与离子液体（ILs）的静电门控，导致高表面电荷载流子密度的积累，经常被用于二维器件。然而，ILs固有的液体性质，它们对湿度的敏感性以及在冷冻液体中引起的应力抑制了ILs构成静电门控的理想平台。本文报告了一种锂离子固体电解质衬底，展示了其在高性能背控n型MoS2和p型WSe2晶体管中的应用，其亚阈值接近60 mV/dec的理想极限，互补逆变放大器增益为34，是同类放大器中最高的。值得注意的是，这些突出的值是在1v电源下获得的。利用微波阻抗显微镜对晶体管沟道进行微观研究，发现了均匀的沟道形成，表明TMD和底层电解衬底之间有光滑的界面。这些结果确立了锂离子衬底作为一种有前途的替代ILs的先进薄膜器件。
Electrostatic gating of two-dimensional (2D) materials with ionic liquids (ILs), leading to the accumulation of high surface charge carrier densities, has been often exploited in 2D devices. However, the intrinsic liquid nature of ILs, their sensitivity to humidity, and the stress induced in frozen liquids inhibit ILs from constituting an ideal platform for electrostatic gating. Here we report a lithium-ion solid electrolyte substrate, demonstrating its application in high-performance back-gated n-type MoS2 and p-type WSe2 transistors with sub-threshold values approaching the ideal limit of 60 mV/dec and complementary inverter amplifier gain of 34, the highest among comparable amplifiers. Remarkably, these outstanding values were obtained under 1 V power supply. Microscopic studies of the transistor channel using microwave impedance microscopy reveal a homogeneous channel formation, indicative of a smooth interface between the TMD and underlying electrolytic substrate. These results establish lithium-ion substrates as a promising alternative to ILs for advanced thin-film devices.