Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy
Growth temperature controlled magnetism in molecular beam epitaxially grown Ni2MnAl Heusler alloy
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DOI：
10.1016/s0022-0248(03)0172-2
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发表时间：
2003-07-01
影响因子：
1.8
通讯作者：
Palmstrom, CJ
中科院分区：
文献类型：
--
作者：
Dong, XY;Dong, JW;Palmstrom, CJ
用分子束外延技术在GaAs（0 0 1）衬底上以Sc 0.3Er 0.7As为中间层生长了单晶Heusler合金Ni 2 MnAl薄膜。研究了生长温度对薄膜结构和磁性的影响。在较低温度下生长的薄膜是非铁磁性的，具有B2类晶体结构;而在较高的生长温度（400 ℃）下生长的薄膜则具有L2（1）类结构。在Ni 2 MnAl/Ni 2 MnGe（铁磁）和Co/Ni 2 MnAl双层膜中检测到交换偏置，表明在180 ℃下生长的Ni 2 MnAl薄膜（B2类结构）是反铁磁有序的。(C)2003 Elsevier Science B. V.保留所有权利。
Single crystal Heusler alloy Ni2MnAl thin films have been grown by molecular beam epitaxy on GaAs (0 0 1) using Sc0.3Er0.7As interlayers. The effect of growth temperature on the structural and magnetic properties was studied. Films grown at lower temperatures were non-ferromagnetic with a B2-like crystal structure; while higher growth temperature (400degreesC) resulted in ferromagnetic films suggesting a L2(1)-like structure. Exchange bias was detected in Ni2MnAl/Ni2MnGe (ferromagnetic) and Co/Ni2MnAl bilayers, suggesting that the Ni2MnAl films grown at 180degreesC (in the B2-like structure) are anti ferromagnetically ordered. (C) 2003 Elsevier Science B.V. All rights reserved.