The statistics of NBTI-induced V/sub T/ and /spl beta/ mismatch shifts in pMOSFETs
The statistics of NBTI-induced V/sub T/ and /spl beta/ mismatch shifts in pMOSFETs
复制标题
pMOSFET 中 NBTI 引起的 V/sub T/ 和 /spl beta/ 失配偏移的统计
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
S. Rauch
中科院分区：
文献类型：
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作者：
S. Rauch
负偏置温度不稳定性（NBTI）是一种pFET退化机制，即使在非常薄的氧化物器件中，也会导致阈值电压偏移高达100 mV或更高。由于利用匹配器件对（例如电流镜和差分对）的模拟电路通常依赖于比这好得多的V/sub T/匹配，因此NBTI引起的V/sub T/失配偏移可能代表CMOS模拟应用的严重可靠性问题。此外，所引起的/spl β/失配移位（在固定栅极NMOS电压下影响漏极电流电平）也可能影响漏极电流和NMOS失配。在本文中，NBTI引起的V/子T/和/spl β/失配位移的饱和，和模型描述这些结果的统计和标度特性的实验结果，提出。
Negative bias temperature instability (NBTI) is a pFET degradation mechanism that can result in threshold voltage shifts up to 100 mV or more, even in very thin oxide devices. Since analog circuits that utilize matched pairs of devices, such as current mirrors and differential pairs, generally depend on V/sub T/ matching considerably better than this, NBTI-induced V/sub T/ mismatch shift may represent a serious reliability concern for CMOS analog applications. Furthermore, induced /spl beta/ mismatch shift (affecting drain current level at a fixed gate overdrive voltage) may also impact drain current and transconductance mismatch. In this paper, experimental results of the statistics and scaling properties of NBTI-induced V/sub T/ and /spl beta/ mismatch shifts in saturation, and models describing these results, are presented.