DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE
DIELECTRIC PROPERTIES OF WURTZITE AND ZINCBLENDE STRUCTURE GALLIUM NITRIDE
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纤锌矿和闪锌矿结构氮化镓的介电性能
DOI：
10.1016/s0022-3697(96)00219-3
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发表时间：
1997
期刊：
影响因子：
--
通讯作者：
K. Brennan
中科院分区：
文献类型：
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作者：
R. Wang;P. Ruden;J. Kolnik;I. H. Oguzman;K. Brennan
我们目前的计算结果的波矢量和频率依赖的介电函数的氧化锌和纤锌矿GaN的经验赝势带结构的基础上。对于两种晶体变体，发现与q →相关的静态介电函数<$∞（q →）是相似的。然而，光学介电函数<$∞（ω）在6 eV <<$ω < 12 eV的范围内是不同的。我们还评估的折射率在频率范围内的基本带隙附近和带隙以上的两个修改的GaN的吸收系数。计算结果与实验数据吻合较好。简要讨论了纤锌矿GaN的双折射。© 1997 Elsevier Science Ltd
We present calculated results for the wavevector and frequency dependent dielectric functions of zincblende and wurtzite GaN based on empirical pseudopotential band structures. The q → -dependent static dielectric functions, ϵ∞(q → ), are found to be similar for the two crystal modifications. The optical dielectric functions, ϵ∞(ω), however, are different in the range 6 eV < ℏω < 12 eV. We also evaluate the indices of refraction in the frequency range near the fundamental bandgaps and the absorption coefficients above the bandgaps for both modifications of GaN. The results are in good agreement with experimental data. The birefringence of wurtzite GaN is briefly discussed. © 1997 Elsevier Science Ltd