Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2
Sensitizing properties of amorphous Si clusters on the 1.54-μm luminescence of Er in Si-rich SiO2
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DOI：
10.1063/1.1579555
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发表时间：
2003-06-02
影响因子：
4
通讯作者：
Bongiorno, C
中科院分区：
文献类型：
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作者：
Franzò, G;Boninelli, S;Bongiorno, C
在这封信中，非晶Si团簇的激发Er注入亚化学计量的SiOx薄膜中的作用将得到阐明。它将被证明，在确定样品的发光特性的温度的SiOx热过程之前，Er注入是至关重要的。特别是，在1.54 μ m的发光强度几乎是恒定的SiOx样品没有退火或预退火温度低于800 degreesC，达到最大值在800 degreesC，并在较高的温度下降低。这些样品的结构特性进行了研究，通过能量过滤透射电子显微镜。它将被证明，退火温度低于1000 degreesC，只有无定形硅纳米团簇存在。我们表明，一个大的密度的小非晶硅团簇产生最好的发光性能，并提高了光学活性铒的分数。(C)2003年，美国物理学会。
In this letter, the role of amorphous Si clusters in the excitation of Er implanted in substoichiometric SiOx films will be elucidated. It will be shown that the temperature of the SiOx thermal process prior to Er implantation is crucial in determining the luminescence properties of the samples. In particular, the luminescence intensity at 1.54 mum is almost constant for SiOx samples not annealed or pre-annealed at temperatures lower than 800degreesC, reaches the maximum at 800degreesC, and decreases at higher temperatures. The structural properties of these samples have been studied by energy filtered transmission electron microscopy. It will be shown that for annealing temperatures lower than 1000degreesC, only amorphous Si nanoclusters are present. We demonstrate that a large density of small amorphous Si clusters produces the best luminescence performance and enhances the fraction of optically active Er. (C) 2003 American Institute of Physics.