EFFECT OF PRESSURE ON NEAR-INFRARED ABE PHOTOLUMINESCENCE SPECTRUM OF 6H SIC CRYSTAL
EFFECT OF PRESSURE ON NEAR-INFRARED ABE PHOTOLUMINESCENCE SPECTRUM OF 6H SIC CRYSTAL
复制标题
DOI：
10.1016/0038-1098(94)00843-4
复制
发表时间：
1995-04-01
影响因子：
2.1
通讯作者：
SLOBODYANYUK, AV
中科院分区：
文献类型：
--
作者：
NIILISK, A;LAISAAR, A;SLOBODYANYUK, AV
本文研究了n型六方晶系6 HSiC单晶在77 K下近红外光致发光光谱中零声子线（ZPL）在10.5kbar以下的静水压作用下的变化。对于所研究的ZPL，发现其线性压力向更高能量移动，从1.68到1.80 meV kbar（-1）。88，537（1993）]，指出与Ti杂质中心的情况相比，在准分子中心周围更强的晶格畸变导致abc光谱中的ZPL。证实了n型SiC晶体中的abe线是由钪族的杂质原子引起的，最可能是钇。
The effect of hydrostatic pressure up to 10.5 kbar on; the abc zero-phonon lines (ZPLs) in the near-infrared photoluminescence spectrum of n-type hexagonal 6H SiC single crystals has been studied at 77 K. For the ZPLs examined linear pressure shifts to higher energies, amounting from 1.68 to 1.80 meV kbar(-1), were found. The recorded shifts exceed by about 1.5 times those obtained earlier for the ZPLs in ABC spectrum of 6H SiC:Ti crystal [Solid State Commun. 88, 537 (1993)], pointing to a stronger lattice distortion around a quasimolecular centre responsible for the ZPLs in the abc spectrum as compared to the case of the Ti impurity centre. It is conjectured that the abe lines in n-type SiC crystals are caused by an impurity: atom from the scandium subgroup, most likely yttrium.