Measurement and interpretation of stress in copper films as a function of thermal history

Measurement and interpretation of stress in copper films as a function of thermal history
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DOI:
10.1557/jmr.1991.1498
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发表时间:
1991-07
影响因子:
2.7
通讯作者:
P. Flinn
P. Flinn
中科院分区:
材料科学4区
文献类型:
--
作者:
P. Flinn

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由于铜作为互连材料相对于铝具有一些优势,因此研究其力学性能是适当的,以便提前准备可能出现的问题,例如困扰铝互连系统的裂纹和空隙。先前用于解释铝膜行为的模型经过轻微修改,也适用于铜。虽然铜的热膨胀更接近于硅,因此热诱发应变更小,但铜的弹性模量大得多,导致应力高得多。这暗示了铜线与电介质的相互作用。
Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.