Measurement and interpretation of stress in copper films as a function of thermal history
Measurement and interpretation of stress in copper films as a function of thermal history
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DOI:
10.1557/jmr.1991.1498
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发表时间:
1991-07
影响因子:
2.7
通讯作者:
P. Flinn
中科院分区:
文献类型:
--
作者:
P. Flinn
Since copper has some advantages relative to aluminum as an interconnection material, it is appropriate to investigate its mechanical properties in order to be prepared in advance for possible problems, such as the cracks and voids that have plagued aluminum interconnect systems. A model previously used to interpret the behavior of aluminum films proves to be, with minor modification, also applicable to copper. Although the thermal expansion of copper is closer to that of silicon and, consequently, the thermally induced strains are smaller, the much larger elastic modulus of copper results in substantially higher stresses. This has implications for the interaction of copper lines with dielectrics.