High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
High-Performance Accumulated Back-Interface Dynamic Threshold SOI MOSFET (AB-DTMOS) with Large Body Effect at Low Supply Voltage
复制标题
低电源电压下具有大体效应的高性能累积背接口动态阈值 SOI MOSFET (AB-DTMOS)
DOI：
10.1143/jjap.38.2483
复制
发表时间：
1998
影响因子：
1.5
通讯作者：
T. Hiramoto
中科院分区：
文献类型：
--
作者：
M. Takamiya;T. Saraya;Tran Thi Ngoc Duyet;Y. Yasuda;T. Hiramoto
提出了一种适用于低功耗应用的高性能累积背界面动态阈值绝缘体上硅金属氧化物半导体场效应晶体管（AB-DTMOS），该晶体管在低电源电压（VDD<0.5V）下具有大的体效应。在AB-DTMOS中，未掺杂的薄SOI和掩埋氧化物之间的背界面由大的负衬底偏压积累，并且栅电极连接到该电感应体。AB-DTMOS在电学上实现了理想的低/阶梯沟道剖面，并实现了最大的体效应。在Vth固定的情况下，由于AB-DTMOS的沟道耗尽层宽度是传统均匀掺杂沟道DTMOS的一半，因此体效应因子（γ）是传统均匀掺杂沟道DTMOS的两倍。实验结果表明，陡峭的亚阈值斜率，高电流驱动，由于大的Vth偏移，和抑制短沟道效应。
A high-performance accumulated back-interface dynamic threshold silicon-on-insulator metal-oxide-semiconductor field effect transistor (AB-DTMOS) with a large body effect at low supply voltage (Vdd< 0.5 V) is proposed for low-power applications. In AB-DTMOS, the back interface between the non-doped thin SOI and the buried oxide is accumulated by a large negative substrate bias, and the gate electrode is connected to this electrically induced body. AB-DTMOS realizes an ideal low/ultrahigh step channel profile electrically and achieves the maximum body effect. At fixed Vth, the body effect factor (γ) of AB-DTMOS is twice as large as that of the conventional uniformly doped channel DTMOS, because the channel depletion layer width of AB-DTMOS is half that of the conventional DTMOS. Experimental results show a steep subthreshold slope, a high current drive due to a large Vth shift, and a suppressed short channel effect.