Cluster-like resistive switching of SrTiO3: Nb surface layers
Cluster-like resistive switching of SrTiO3: Nb surface layers
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DOI：
10.1088/1367-2630/15/10/103017
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发表时间：
2013-10-17
影响因子：
3.3
通讯作者：
Szot, K.
中科院分区：
文献类型：
--
作者：
Rodenbuecher, C.;Speier, W.;Szot, K.
了解钙钛矿中的阻变机制对于新型非易失性存储器的开发具有特别重要的意义。纳米尺度的调查最近显示，在模型材料SrTiO 3的一个间接类型的开关是存在的。在本文中，我们表明，施主掺杂Nb的开关类型的根本变化。我们报告了对导电团簇的观察，当施加电压时，这些团簇可以在高阻和低阻状态之间独立切换。此外，我们表明，电阻开关发生在半导体表面层上的金属块的SrTiO 3：Nb单晶，它可以改变它的性质很容易在外部梯度。基于各种测量，我们假设，离子运动导致创建的第二阶段的簇之间的纳米丝必须考虑到在建模的电阻开关。
The understanding of the resistive switching mechanisms in perovskites is of particular importance for the development of novel non-volatile memories. Nanoscale investigations recently revealed that in the model material SrTiO3 a filamentary type of switching is present. In this paper, we show that upon donor doping with Nb the switching type changes fundamentally. We report on the observation of conducting clusters that can be switched independently between a high resistance and a low resistance state when applying a voltage. Furthermore, we show that the resistive switching takes place in a semiconducting surface layer on top of the metallic bulk of SrTiO3: Nb single crystals, which can change its properties easily under external gradients. Based on various measurements, we postulate that ionic movements leading to the creation of secondary phases as nano-filaments between the clusters have to be taken into account in modelling the resistive switching.