Nano temperature sensor using selective lateral growth of carbon nanotube between electrodes
Nano temperature sensor using selective lateral growth of carbon nanotube between electrodes
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DOI：
10.1109/tnano.2006.888531
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发表时间：
2007-01-01
影响因子：
2.4
通讯作者：
Ting, Jyh-Hua
中科院分区：
文献类型：
--
作者：
Kuo, Cheng Yung;Chan, Chia Lang;Ting, Jyh-Hua
本文介绍了碳纳米管（CNT）在两个电极之间的横向生长，并将其用作纳米温度传感器。电极的制作采用MEMS技术。通过微波等离子体化学气相沉积在两个电极之间选择性地生长CNT。在引线键合之后，对生长的CNT进行测试和校准。改变CNT的生长条件，例如CH 4或N-2气体的流速，以获得高质量的CNT传感器。SEM用于观察碳纳米管的形状和结构，而拉曼光谱分析用于指示碳纳米管中的石墨化或非晶结构的程度。在不同温度下测量了碳纳米管的I-V曲线，得到了碳纳米管电阻与温度的线性关系。该结果表明CNT可以用作温度传感器。
This paper presents lateral growth of carbon nanotube (CNT) between two electrodes and its use as nano temperature sensor. Fabrication of electrodes is made by MEMS techniques. The CNT is grown selectively by microwave plasma chemical vapor deposition between two electrodes. After wire bonding, the grown CNT is tested and calibrated. The growth conditions of CNT, such as the flow rate of CH4 or N-2 gas, are varied to obtain a high-quality CNT sensor. SEM is used to observe the shape and structure of CNT, while Raman spectrum analysis is used to indicate the degree of graphitization or amorphrous structure in the CNT. The I-V curve of CNT is measured at different temperature, and a linear relationship between the electric resistance of CNT and the temperature is obtained. This result indicates that CNT can be used as a temperature sensor.