Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
Electron, Neutron, and Proton Irradiation Effects on SiC Radiation Detectors
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DOI：
10.1109/tns.2020.3029730
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发表时间：
2020-12-01
影响因子：
1.8
通讯作者：
Moll, Michael
中科院分区：
文献类型：
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作者：
Rafi, Joan Marc;Pellegrini, Giulio;Moll, Michael
由于其低暗电流、高透明度、高导热性和潜在的辐射硬度，人们对碳化硅（SiC）设备在辐射恶劣环境和高温下的辐射监测，特别是未来核聚变反应堆中的等离子体诊断系统特别感兴趣。本文研究了在外延4H-SiC衬底上生产的四象限p-n结二极管。通过电流-电压（I - V）和电容-电压（C - V）技术研究了电子、中子和质子辐照(分别达到1 × 10（16）个电子(e)/cm(2)、2 × 10（15）个中子(n)/cm(2)和2.5 × 10（15）个质子（p)/cm(2)的影响）对电特性的影响。无论颗粒类型和施加的影响如何，结果表明辐照SiC器件的反向电流相似，至少比同类Si器件低约4个数量级。评估了辐照对象限间电阻和象限间隔离中电荷积聚的影响。此外，器件作为辐射探测器的性能研究暴露于准直的Pu-239-Am-241-Cm-244三α源。即使在最高的辐照影响下，室温下的性能也保持不变，尽管电特性中的整流特性丢失了。从结果来看，可以设想在恶劣环境中使用SiC器件进行α粒子检测的优势。
Owing to their low dark current, high transparency, high thermal conductivity, and potential radiation hardness, there is a special interest in silicon carbide (SiC) devices for radiation monitoring in radiation harsh environments and with elevated temperatures and, especially, for the plasma diagnostic systems in future nuclear fusion reactors. In this work, four-quadrant p-n junction diodes produced on epitaxial 4H-SiC substrates are studied. The impact of electron, neutron, and proton irradiations (up to fluences of 1 x 10(16) electrons (e)/cm(2), 2 x 10(15) neutrons (n)/cm(2), and 2.5 x 10(15) protons (p)/cm(2), respectively) on the electrical characteristics is studied by means of current-voltage (I - V) and capacitance-voltage (C - V) techniques. Regardless of the particle type and applied fluences, the results show similar low reverse currents for irradiated SiC devices, which are at least about four orders of magnitude lower than comparable Si devices. The effects of irradiation on interquadrant resistance and charge build-up in the interquadrant isolation are assessed. Furthermore, device performance as a radiation detector is investigated upon exposure to a collimated Pu-239-Am-241-Cm-244 tri-alpha source. The performance at room temperature is preserved even for the highest irradiation fluences, despite the fact that the rectification character in electrical characteristics is lost. From the results, advantages of using SiC devices in alpha particle detection in harsh environments can be envisaged.