Preparation of CdSSe-ZnS superlattice, SrS, and CdSSe-SrS superlattice by hot-wall epitaxy, and applications to electroluminescent devices
Preparation of CdSSe-ZnS superlattice, SrS, and CdSSe-SrS superlattice by hot-wall epitaxy, and applications to electroluminescent devices
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DOI：
10.1007/bf02661628
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发表时间：
1993-05
影响因子：
2.1
通讯作者：
H. Fujiyasu;Yoji Takeuchi;Kyoko Hikida;T. Kiichi;K. Masuo;Y. Gotou;K. Ishino;A. Ishida
中科院分区：
文献类型：
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作者：
H. Fujiyasu;Yoji Takeuchi;Kyoko Hikida;T. Kiichi;K. Masuo;Y. Gotou;K. Ishino;A. Ishida
用热壁外延方法制备了CdSSe(掺锰，Eg=1.9-2.5 eV，晶格常数a=6.05-5.8A)-ZnS(Eg=3.56 eV，a=5.41a)超晶格、SrS(掺Ce，E=4.4 eV，a=6.02a)层和CdSSe-SRS(掺Ce)超晶格层，并报道了有源层的性质和电致发光器件特性。对于含硫化锌的超晶格，在正弦电压(Vo-p=200V)和频率为1 kHz时，最大亮度为800cd/m2，由于硫化镉和硫化锌之间的晶格失配(8%-15%)引起的大应变，谱峰的波长为610 nm。最大亮度为557cd/m2，CIE色度为(x，y)=0.58,982 cd/m2，CIE色度为0.61，0.38。对于具有SRS的超晶格，在340V的电压下，具有SRS(Ce掺杂)有源层的器件的最大亮度接近700cd/m2。由于载流子落入具有CdSSe-SRS超晶格有源层的器件的量子阱中，在小于450 nm的光子波长范围内观察到了蓝色电致发光。
CdSSe (manganese-doped, Eg= 1.9–2.5 eV, lattice constant a = 6.05–5.8A)-ZnS (Eg = 3.56 eV, a = 5.41A) superlattices, SrS (cerium-doped, E = 4.4 eV, a = 6.02A) layers, and CdSSe-SrS (cerium-doped) superlattice layers nave been prepared by hot-wall epitaxy, and the properties and the electroluminescent device characteristics of the active layers are reported. For the superlattices with ZnS, the maximum luminance was 800 cd/m2at an applied sinusoidal voltage (Vo-p= 200 V) with frequency 1kHz, and the wavelength of the spectral peak was 610 nm due to the large strain caused by the lattice mismatch (8–15%) between the CdSSe and ZnS layers. The maximum luminance and Comisson Internationale de Enluminure (CIE) chromaticity of CdS(Mn)-ZnS superlattices and CdSe(Mn)-ZnS superlattice devices were 557cd/m2and (x,y) = (0.58,0.41) and 982 cd/m2and (0.61, 0.38), respectively. For superlattices with SrS, the maximum luminance of the device with the SrS (cerium-doped) active layer was nearly 700 cd/m2at a voltage of 340V. Blue electroluminescent emission was observed in the photon wavelength region less than 450 nm, due to carriers dropping into the quantum wells of the device with the CdSSe-SrS superlattice active layer.