Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter
Application of a Normally OFF Silicon Carbide Power JFET in a Photovoltaic Inverter
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常关型碳化硅功率JFET在光伏逆变器中的应用
DOI：
10.1109/apec.2009.4802728
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发表时间：
2009
期刊：
影响因子：
--
通讯作者：
R. Kelley
中科院分区：
文献类型：
--
作者：
M. Mazzola;R. Kelley
认为 SiC JFET 只是常开器件的传统观点最近已被第一个实用的常关 SiC JFET 所取代。这种全新的真正增强模式、三端子、纯 SiC 设计为设计人员提供了常关解决方案，保留了常开 SiC JFET 的所有优点。只需简单改变串联栅极阻抗，EM SiC JFET 即可与常见 IC 驱动器一起使用，并且是大多数应用中当前硅功率器件的直接替代品。常断 SiC JFET 的器件特性优于 MOSFET 和 IGBT，并且可以通过降低传导和开关损耗来提高效率。本文介绍的工作演示了在基于全桥拓扑的商用太阳能逆变器中用 4 个常断 SiC JFET 直接替换 4 个 IGBT。虽然作为直接替代器件进行演示是主要目标，但对每个器件的运行系统效率进行了观察和比较，并观察到 SiC JFET 的立即改进。
Conventional wisdom that the SiC JFET is only a normally on device has recently been superseded by the first practical normally off SiC JFET. This new true enhancement mode, three-terminal, pure-SiC design provides designers with a normally off solution that retains all the benefits of the normally on SiC JFET. With only a simple change in series gate impedance, the EM SiC JFET can be used with common IC drivers and is a drop-in replacement for current silicon power devices in most applications. The device characteristics for the normally off SiC JFET are superior to MOSFETs and IGBTs and offer the possibility of efficiency improvements from reduced conduction and switching losses. The work presented in this paper demonstrates the drop-in replacement of 4 IGBTs with 4 normally off SiC JFET in a commercially available solar inverter based on a full-bridge topology. While demonstration as a drop-in replacement device was the main goal, system efficiency for operation with each device was observed and compared and an immediate improvement observed for the SiC JFET.