Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO2 Grown on Si
Positive Charges and E' Centers Formed by Vacuum Ultraviolet Radiation in SiO2 Grown on Si
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Si 上生长的 SiO2 真空紫外辐射形成的正电荷和 E 中心
DOI：
10.1143/jjap.29.2265
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发表时间：
1990
影响因子：
1.5
通讯作者：
Keizo Suzuki
中科院分区：
文献类型：
--
作者：
K. Yokogawa;Y. Yajima;T. Mizutani;S. Nishimatsu;Keizo Suzuki
当向薄膜提供 -10 至 10 V 之间的偏置电压时，用真空紫外 (VUV) 光子（16.7 和 16.8 eV）照射在 Si 上热生长的二氧化硅薄膜。分别通过 C-V（电容电压）和 ESR 测量来研究薄膜中产生的正电荷和 E' 中心。观察到的 E' 中心分布在 SiO2 表面附近，而正电荷则位于或非常靠近 SiO2/Si 界面。正电荷和E'中心在其偏压和照射时间依赖性以及深度分布方面表现出不同的特征。这些结果表明，检测到的正电荷与弱 Si-Si 键之间的氧空位位点捕获的空穴不同。
Silicon dioxide films thermally grown on Si are irradiated with vacuum ultravioulet (VUV) photons (16.7 and 16.8 eV) as the films are supplied with bias voltages between -10 and 10 V. The resultant positive charges and E' centers in the films are studied by C-V (capacitance-voltage) and ESR measurements, respectively. The observed E' centers are distributed near the SiO2 surface, while the positive charges are localized at or very near the SiO2/Si interface. The positive charges and the E' centers show different characteristics in their bias and irradiation time dipendencies as well as in their depth distributions. These results indicate that the detected positive charges are different from holes trapped at oxygen vacancy sites between weak Si–Si bonds.