Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al2O3 High-k Dielectric Deposited on Si Substrates
Effect of Annealing on Physical and Electrical Properties of Ultrathin Crystalline γ-Al2O3 High-k Dielectric Deposited on Si Substrates
复制标题
退火对硅基超薄结晶γ-Al2O3高k电介质物理和电性能的影响
DOI：
10.1143/jjap.43.5404
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发表时间：
2004
影响因子：
1.5
通讯作者：
M. Ishida
中科院分区：
文献类型：
--
作者：
M. Shahjahan;T. Okada;K. Sawada;M. Ishida
利用分子束外延技术在Si衬底上制备了等效氧化厚度为1.3 ~ 2.5 nm的超薄γ-Al2O3晶体薄膜，并在不同气氛下（300 ~ 700℃）进行了退火。研究了退火对超薄γ-Al2O3薄膜的化学成分、结晶性能、表面形貌和电学性能的影响。观察到退火后的电性能有所改善。在高温退火过程中，氮原子被掺入到γ-Al2O3 （γ-Al2O3:N）薄膜中。退火后表面未观察到明显的凹坑和针孔，退火过程中晶体性能保持不变。
Ultrathin crystalline γ-Al2O3 films with an equivalent oxide thickness (EOT) of 1.3 nm to 2.5 nm have been fabricated on Si substrates by molecular beam epitaxy and annealed in various atmospheres at different temperatures (300–700°C). The effect of the annealing on the chemical composition, crystalline property, surface morphology and electrical properties of the ultrathin γ-Al2O3 films has been studied. An improvement in the electrical properties after annealing was observed. It was also observed that the nitrogen atoms were incorporated into the γ-Al2O3 (γ-Al2O3:N) films during annealing at higher temperatures. No detectable pits or pinholes were observed on the surfaces after annealing and the crystalline property remained unchanged during annealing.