Cascade perovskite single crystal for gamma-ray spectroscopy.
Cascade perovskite single crystal for gamma-ray spectroscopy.
复制标题
DOI：
10.1016/j.isci.2023.107935
复制
发表时间：
2023-10-20
期刊：
影响因子：
5.8
通讯作者：
Lei, Wei
中科院分区：
文献类型：
--
作者：
Wang, Xin;Pan, Yuzhu;Xu, Yubing;Zhao, Jingda;Li, Yuwei;Li, Qing;Chen, Jing;Zhao, Zhiwei;Zhang, Xiaobing;Bae, Byung Seong;Onwudiwe, Damian C.;Xu, Xiaobao;Lei, Wei
卤化铅钙钛矿单晶（HLPSCs）具有衰减系数高、缺陷容忍度强、迁移寿命产品大等优点，在伽马射线探测中具有很大的应用潜力。然而，移动的卤化物离子会在高外偏置下迁移，这既会削弱伽马射线响应，又会产生额外的噪声。在这里，我们报道了由级联hlpsc制成的伽马射线PIN光电二极管，包括离子形成和电子空穴形成的电结，可以抑制离子迁移并改善电荷收集。我们基于级联hlpsc的光电二极管（MAPbBr3/MAPbBr2.5Cl0.5/MAPbCl3）显示出一个宽约52 μm的卤化物离子形成的耗尽层。沿宽离子形成结的内置电位确保了1.1 × 10−2 cm2V−1的高迁移寿命产品。因此，我们的伽马射线PIN光电二极管对241Am， 137Cs和60Co表现出令人信服的响应；能量分辨率分别达到9.4%@59.5keV和5.9%@662keV。这项工作为构建基于hlpsc的高性能伽马射线探测器提供了一条新的途径。钙钛矿基器件中离子形成电结的制备基于溶液处理半导体器件的伽玛射线光子解析固体物理学
The halide lead perovskite single crystals (HLPSCs) have great potential in gamma-ray detection with high attenuation coefficient, strong defects tolerance, and large mobility-lifetime product. However, mobile halide ions would migrate under high external bias, which would both weaken the gamma-ray response and cause additional noise. Here, we report the gamma-ray PIN photodiodes made of cascade HLPSCs including both ion-formed and electron-hole-formed electrical junctions that could suppress the ions migration and improve the charges collection. Our photodiodes based on cascade HLPSCs (MAPbBr3/MAPbBr2.5Cl0.5/MAPbCl3) show a wide halide-ion-formed depletion layer of ∼52 μm. The built-in potential along the wide ionic-formed junction ensures a high mobility-lifetime product of 1.1 × 10−2 cm2V−1. As a result, our gamma-ray PIN photodiodes exhibit compelling response to 241Am, 137Cs, and 60Co; the energy resolution can reach 9.4%@59.5keV and 5.9%@662keV, respectively. This work provides a new path toward constructing high-performance gamma-ray detectors based on HLPSCs. Gamma-ray photodiodes made by solution-processed epitaxial growth Fabrication of ion-formed electrical junctions in perovskite-based devices Resolving gamma-ray photons based on solution-processed semiconductors Devices; Solid state physics
登录
查看更多内容
影响因子：
4
作者：
Cao, Min;Tian, Jiyu;Wei, Dacheng
通讯作者：
Wei, Dacheng
影响因子：
10.8
作者：
Pan, Dongxu;Fu, Yongping;Jin, Song
通讯作者：
Jin, Song
影响因子：
19
作者：
He, Yuhong;Pan, Wanting;Yang, Bai
通讯作者：
Yang, Bai
影响因子：
35
作者：
Lin, Qianqian;Armin, Ardalan;Meredith, Paul
通讯作者：
Meredith, Paul
影响因子：
10.6
作者：
Pan, Lei;He, Yihui;Kanatzidis, Mercouri G.
通讯作者：
Kanatzidis, Mercouri G.