Step and Terrace Formation on Ge(111) Surface in H2 Annealing
Step and Terrace Formation on Ge(111) Surface in H2 Annealing
复制标题
H2 退火中 Ge(111) 表面台阶和台地的形成
DOI：
10.1143/apex.5.121301
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发表时间：
2012
影响因子：
2.3
通讯作者：
A. Toriumi
中科院分区：
文献类型：
--
作者：
T. Nishimura;C. Lee;K. Nagashio;A. Toriumi
本文报道了锗(Ge)(111)在氢气(H2)退火中原子平整表面的形成。在350-850℃对(111)取向的Ge基片进行了退火处理，并用原子力显微镜测量了其表面形貌。在500~850℃的温度范围内，氢气在Ge(111)表面形成阶梯和梯形结构，并从Ge表面氧化机理的角度讨论了在400℃下在Ge(111)表面形成2.4 nm厚的GeO2后的表面形貌。
This paper reports the atomically flat surface formation of germanium (Ge) (111) in hydrogen gas (H2) annealing. The (111)-oriented Ge substrate was annealed at 350–850 °C, and the surface morphology was measured using an atomic force microscope. A step and terrace formation was observed on the Ge(111) surface in H2 annealing at the temperature ranging from 500 to 850 °C. Furthermore, the surface morphology after 2.4-nm-thick GeO2 formation at 400 °C on Ge(111) is also discussed from the viewpoint of the Ge surface oxidation mechanism.