A unified model for single/multifinger HBTs including self-heating effects
A unified model for single/multifinger HBTs including self-heating effects
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DOI：
10.1109/22.900006
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发表时间：
2001
影响因子：
4.3
通讯作者：
A. Garlapati;S. Prasad
中科院分区：
文献类型：
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作者：
A. Garlapati;S. Prasad
本文提出了一个考虑自热效应的统一解析大信号模型。将该模型应用于单指AlGaAs/GaAs异质结双极晶体管(HBT)和多指InGaAs/GaAsHBT。将HBT中的自热效应模拟为集电极电流对基极发射极电压的反馈。本文提出的电路的主要优点是不需要像现有模型那样对电路和热电路之间的耦合进行额外的分析。小信号异质结双极晶体管模型是基于在多个偏置点测量的多个频率下的S参数而实现的。通过比较S参数的实测值和模拟值，验证了该模型的正确性。大信号模型以正向Gummel图为基础，建立在小信号模型之上。通过比较仿真和测量的直流I-V特性，验证了该模型的正确性。
This paper presents a unified analytical large-signal model that includes self-heating effects. The model is applied to a single-finger AlGaAs/GaAs heterojunction bipolar transistor (HBT) and a multifinger InGaAs/GaAs HBT. The self-heating effect in the HBT is simulated as a feedback from the collector current to the base-emitter voltage. The main advantage of the circuit presented here is that additional analysis of coupling between electrical and thermal circuits is not required, as is the case with the existing models. The small-signal HBT model is implemented based on the S-parameters at multiple frequencies measured at multiple bias points. This model is verified by comparing the measured and simulated S-parameters. The large-signal model is based on the forward Gummel plot and is built over the small-signal model. This model is verified by comparing the simulated and measured dc I-V characteristics.