Charge carrier transport in thermally oxidized metal/PS/p-Si and metal/PS/n-Si structures
Charge carrier transport in thermally oxidized metal/PS/p-Si and metal/PS/n-Si structures
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DOI：
10.1088/0268-1242/19/1/017
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发表时间：
2004
影响因子：
1.9
通讯作者：
D. Yarkin;L. Balagurov;S. Bayliss;I. Zvyagin
中科院分区：
文献类型：
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作者：
D. Yarkin;L. Balagurov;S. Bayliss;I. Zvyagin
金属/PS/c-Si结构与多孔硅（PS）层的55？75%的孔隙率制作在中度掺杂的p型和n型c-Si衬底，并在400？九百六十？C.我们研究了氧化对这些结构中载流子输运的影响。结果表明，在大正向偏压下，陷阱填充的空间电荷限制电流（SCLC）是主要的输运机制。目前的分析？SCLC区域中的电压特性允许我们确定富陷阱组织峡部的有效厚度deff的氧化依赖性，其中空间电荷主要积累。在低偏压下观察到的欧姆区域中的电导的指数偏差依赖性的解释载流子隧穿通过硅微晶之间的SiOX地峡形成的势垒。研究结果可用于氧化聚苯乙烯及类似材料的电子器件制作。
Metal/PS/c-Si structures with porous silicon (PS) layers of 55?75% porosity were fabricated on moderately doped p- and n-type c-Si substrates and were thermally oxidized at 400?960 ?C. We studied the effect of oxidation on the charge carrier transport in these structures. It was demonstrated that trap-filled space charge limited current (SCLC) is the dominant transport mechanism at large forward bias. The analysis of the current?voltage characteristics in the SCLC region allowed us to determine the oxidation dependence of the effective thickness deff of the trap-rich tissue isthmuses, in which space charge is mostly accumulated. The exponential deff-dependence of the conductance in the ohmic region observed at low bias is explained by carrier tunnelling through potential barriers formed by SiOX isthmuses between silicon crystallites. The results can be used for fabrication of electronic devices based on oxidized PS and similar materials.