Chemical Nanoparticle Deposition of Transparent ZnO Thin Films
Chemical Nanoparticle Deposition of Transparent ZnO Thin Films
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DOI：
10.1149/1.2372228
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发表时间：
2007
影响因子：
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通讯作者：
Seung-Yeol Han;Yu-Jen Chang;Doo-Hyoung Lee;S. Ryu;T. Lee;Chih-hung Chang
中科院分区：
文献类型：
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作者：
Seung-Yeol Han;Yu-Jen Chang;Doo-Hyoung Lee;S. Ryu;T. Lee;Chih-hung Chang
报道了一种沉积透明 ZnO 薄膜的新方法。这种方法使用连续流微反应器来产生纳米粒子流，然后撞击加热的基材。沉积薄膜由高度透明的纳米晶 ZnO 组成，光学带隙为 4.35 eV。经过后空气退火工艺后，使用该技术成功制造了功能性 ZnO 金属绝缘体半导体场效应晶体管 (MISFET)。产生了有效迁移率为0.16 cm 2 /V s 和电流开关比为~10 4 的MISFET。这种方法有望作为一种低成本的纳米结构薄膜制造技术。
A novel approach to deposit transparent ZnO thin films is reported. This approach uses a continuous-flow microreactor to generate a flux of nanoparticles which then impinge on a heated substrate. The as-deposited film consists of highly transparent nanocrystalline ZnO with a dilated optical bandgap of 4.35 eV. Functional ZnO metal-insulator-semiconductor field-effect-transistors (MISFETs) were successfully fabricated using this technique after a post-air-annealing process. A MISFET with an effective mobility of 0.16 cm 2 /V s and a current on-to-off ratio of ∼10 4 was produced. This approach is promising as a low-cost technique for fabricating nanostructured thin films.