A 2D Analytical Model of SOI Double RESURF Effect
A 2D Analytical Model of SOI Double RESURF Effect
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发表时间：
2005
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通讯作者：
Ic Design
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作者：
Ic Design
提出了一种新的SOI器件双RESURF效应的二维解析模型.基于二维Poisson方程，得到了SOI器件表面势和场分布的新的解析描述.建立了SOI器件双RESURF效应和单RESURF效应的统一判据.根据该模型和半导体器件模拟软件MEDICI，讨论了p-顶层的电场减小机制和击穿特性，并给出了优化漂移区浓度的RESURF掺杂最佳区域，研制了击穿电压为560 V和720 V的双RESURF SOI LDMOS数值模拟和实验结果表明，支持分析模型。
A new 2D analytical model of the double RESURF effect for the SOI devices is proposed.Based on the 2D Poisson equation,a new analytical description of the surface potential and field distribution is obtained.A new unified criterion of double and single RESURF effects of SOI devices is developed.According to the model and the semiconductor device simulator MEDICI,the electric field reduction mechanism and breakdown characteristics of the p-top layer are discussed,and a RESURF doping optimal region for optimizing the drift region concentration is given.The double REURF SOI LDMOS with 560V and 720V breakdown voltages are manufactured successfully.The numerical simulation and experimental results are shown to support the analytical model.