Comparison study of N‐ and In‐polar {0001} InN layers grown by MOVPE
Comparison study of N‐ and In‐polar {0001} InN layers grown by MOVPE
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MOVPE 生长的 N 极性和 In 极性 {0001} InN 层的比较研究
DOI：
10.1002/pssc.201100093
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
M. Kneissl
中科院分区：
文献类型：
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作者：
D. V. Dinh;M. Pristovsek;S. Solopow;D. Skuridina;M. Kneissl
我们比较了使用金属有机气相外延直接在 c 面 (0001) 蓝宝石上生长的 InN 层和在 (0001) GaN 模板上生长的 InN 层。在氮化c面蓝宝石上生长的InN显示N极性，而在c面GaN模板上生长的InN显示In极性。 N极性和In极性InN层表现出不同的表面形貌和结晶度。 N-极性InN在较高生长温度下生长时最平滑，而In-极性InN在中等生长温度下最平滑。蓝宝石上N极性InN的生长模式为Frank-Van der Merwe，而GaN模板上In极性InN的生长模式为Volmer-Weber。两层的电性能相似。 In-极性 InN 层的低温光致发光很可能由于双轴压应力而转移到更高的能量。 （© 2012 WILEY-VCH Verlag GmbH & Co. KGaA，魏因海姆）
We compare InN layers grown directly on c -plane (0001) sapphire and on (0001) GaN templates using metal-organic vapor phase epitaxy. InN grown on nitridated c -plane sapphire showed N-polarity, while InN grown on c -plane GaN templates showed In-polarity. N-polar and In-polar InN layers showed different surface morphology and crystallinity. N-polar InN was smoothest when grown at higher growth temperatures, while In-polar InN was smoothest at intermediate growth temperatures. Growth mode of the N-polar InN on sapphire is Frank-Van der Merwe, while growth mode of the In-polar InN on GaN templates is Volmer-Weber. Electrical properties were similar for both layers. Lowtemperature photoluminescence of In-polar InN layers is shifted to higher energies most likely due to biaxial compressive stresses. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)