CoolSiC Trench MOSFET Combining SiC Performance With Silicon Ruggedness
CoolSiC Trench MOSFET Combining SiC Performance With Silicon Ruggedness
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CoolSiC 沟槽 MOSFET 将 SiC 性能与硅坚固性相结合
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
R. Siemieniec
中科院分区：
文献类型：
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作者：
D. Peters;T. Basler;B. Zippelius;T. Aichinger;W. Bergner;Romain;Estève;Daniel Kueck;R. Siemieniec
本文总结了新型ColSiCTM MOSFET的部分特性。该器件结合了低静态和动态损耗以及类似于Si-IGBT的高栅氧化层可靠性，完全符合典型的工业要求。温度特性、阈值电压选择和Vgs_on使得器件易于操作，特别是对于并行操作。开关行为可以完全由栅极电阻控制。Dethard Peters，托马斯Basler，Bernd Zippelius，托马斯Aichinger，Wolfgang Bergner，Romain Esteve，丹尼尔Kueck，Ralf Siemieniec，英飞凌科技股份公司
This article summarizes selected features of the new ColSiCTM MOSFET. The device combines low static and dynamic losses with high Si-IGBT like gate oxide reliability right fitting to typical industrial requirements. The temperature behavior, threshold voltage selection and Vgs_on makes the device easy to operate, in particular for operation in parallel. The switching behavior can be fully controlled by the gate resistor. Dethard Peters, Thomas Basler, Bernd Zippelius, Thomas Aichinger, Wolfgang Bergner, Romain Esteve, Daniel Kueck, Ralf Siemieniec, Infineon Technologies AG