Strain engineering of the silicon-vacancy center in diamond
Strain engineering of the silicon-vacancy center in diamond
复制标题
DOI：
10.1103/physrevb.97.205444
复制
发表时间：
2018-05-29
影响因子：
3.7
通讯作者：
Loncar, Marko
中科院分区：
文献类型：
--
作者：
Meesala, Srujan;Sohn, Young-Ik;Loncar, Marko
我们通过使用纳米电力机械系统改变其静态应变环境，控制钻石中硅接面（SIV）颜色中心的电子结构。这允许在广泛的范围内对SIV光学和自旋过渡频率进行确定性和本地调整，这是迈向多标志网络的重要步骤。在此过程中，我们推断了SIV的菌株Hamiltonian，揭示了电子轨道状态的1 pHz/应变的大量应变敏感性。我们确定旋转轨道相互作用导致自旋跃迁100 Thz/应变的较大应变敏感性，并提出一个实验，其中SIV旋转与纳米力学谐振器强烈耦合。
We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.