Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application
Fluorine passivation of vacancy defects in bulk germanium for Ge metal-oxide-semiconductor field-effect transistor application
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DOI：
10.1063/1.4746389
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发表时间：
2012-08-13
影响因子：
4
通讯作者：
Saraswat, Krishna C.
中科院分区：
文献类型：
--
作者：
Jung, Woo-Shik;Park, Jin-Hong;Saraswat, Krishna C.
锗（Ge）中的空位缺陷以几种方式不利地影响基于Ge的金属氧化物半导体场效应晶体管（MOSFET）的电性能。它们表现为受体位点，从而使源极/漏极区中的n型掺杂剂失活。它们还可以增加衬底漏电流并影响沟道区中的载流子寿命。本文采用扩展电阻剖面法（SRP）对锗中空位缺陷的电学行为进行了表征和验证。研究了热退火对空位浓度的影响。最后，使用氟（F）离子注入钝化这些缺陷，以证明在Ge-MOSFET的性能增强的可行性。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4746389]
Vacancy defects in germanium (Ge) adversely impact the electrical performance of Ge based metal-oxide-semiconductor field-effect transistor (MOSFET) in several ways. They behave as an acceptor site, thereby deactivating n-type dopants in the source/drain region. They can also increase substrate leakage currents and impact carrier lifetime in the channel region. In this paper, we characterize and verify the electrical behavior of vacancy defects in Ge using spreading resistance profiling (SRP). Effect of thermal annealing on the vacancy concentration is studied. Finally, passivation of these defects using fluorine (F) ion-implant is shown to demonstrate the feasibility of performance enhancement in Ge-MOSFETs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4746389]