Thermoelectric performance of a metastable thin-film Heusler alloy
Thermoelectric performance of a metastable thin-film Heusler alloy
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DOI:
10.1038/s41586-019-1751-9
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发表时间:
2019-12-05
期刊:
影响因子:
64.8
通讯作者:
Bauer, E.
中科院分区:
文献类型:
--
作者:
Hinterleitner, B.;Knapp, I.;Bauer, E.
Thermoelectric materials transform a thermal gradient into electricity. The efficiency of this process relies on three material-dependent parameters:the Seebeck coefficient, the electrical resistivity and the thermal conductivity, summarized in the thermoelectric figure of merit. A large figure of merit is beneficial for potential applications such as thermoelectric generators. Here we report the thermal and electronic properties of thin-film Heusler alloys based on Fe2V0.8W0.2Al prepared by magnetron sputtering. Density functional theory calculations suggest that the thin films are metastable states, and measurements oft he power factor-the ratio of the Seebeck coefficient squared divided by the electrical resistivity-suggest a high intrinsic figure of merit for these thin films. This may arise from a large differential density of states at the Fermi level and a Weyl-like electron dispersion close to the Fermi level, which indicates a high mobility of charge carriers owing to linear crossing in the electronic bands.