Effects of the narrow band gap on the properties of InN
Effects of the narrow band gap on the properties of InN
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DOI：
10.1103/physrevb.66.201403
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发表时间：
2002-11-15
影响因子：
3.7
通讯作者：
Schaff, WJ
中科院分区：
文献类型：
--
作者：
Wu, J;Walukiewicz, W;Schaff, WJ
在通过分子束外延生长的具有一系列自由电子浓度的纤锌矿 InN 薄膜上进行了红外反射实验。等离子体边缘频率的测量用于确定电子有效质量。结果表明，随着电子浓度的增加，电子有效质量显着增加，表明 InN 中存在非抛物线导带。我们还发现基本带隙存在较大的布尔斯坦-莫斯位移。观察到的效应通过窄带隙半导体双能带凯恩模型中的 k.p 相互作用定量描述。
Infrared reflection experiments were performed on wurtzite InN films with a range of free-electron concentrations grown by molecular-beam epitaxy. Measurements of the plasma edge frequencies were used to determine electron effective masses. The results show a pronounced increase in the electron effective mass with increasing electron concentration, indicating a nonparabolic conduction band in InN. We have also found a large Burstein-Moss shift of the fundamental band gap. The observed effects are quantitatively described by the k.p interaction within the two-band Kane model of narrow-gap semiconductors.