Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy
Calcium impurities in enhanced-depletion-width GaInNAs grown by molecular-beam epitaxy
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分子束外延生长的增强耗尽宽度 GaInNA 中的钙杂质
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
J. Harris
中科院分区：
文献类型：
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作者：
A. Ptak;D. Friedman;S. Kurtz;R. Reedy;M. Young;D. Jackrel;H. Yuen;S. Bank;M. Wistey;J. Harris
钙杂质中观察到的GaInNAs生长的分子束外延和金属有机化学气相沉积的高质量分辨率的二次离子质谱测量。的Ca似乎起源于收到的GaAs基板的表面，并推测来自基板制备中使用的抛光过程。在不同的实验室和不同的生长方法生长的样品中观察到钙。没有可检测到的Ca掺入到外延GaAs中，尽管在GaInNAs中观察到高达1017 cm −3的Ca水平。有迹象表明，Ca杂质作为浅受主GaInNAs和可能，至少部分地，控制背景受主浓度。这对需要非常低的背景掺杂以增强电流收集的高电流p-i-n GaInNAs太阳能电池具有影响。
Ca impurities are observed in GaInNAs grown by both molecular-beam epitaxy and metal organic chemical-vapor deposition by high-mass-resolution secondary-ion mass spectrometry measurements. The Ca appears to originate from the surface of the as-received GaAs substrates, and presumably comes from the polishing process used in substrate preparation. Ca was observed in samples grown by different growth methods and in different laboratories. No detectable Ca incorporates into epitaxial GaAs, although Ca levels as high as 1017cm−3 are observed in GaInNAs. There are indications that the Ca impurities act as shallow acceptors in GaInNAs and may, at least in part, control the background acceptor concentrations. This has implications for high-current, p-i-n GaInNAs solar cells that require very low background doping to enhance current collection.