Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite
Carrier Generation in p-Type Wide-Gap Oxide: SnNb2O6 Foordite
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DOI：
10.1021/acs.chemmater.8b03408
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发表时间：
2018-11
影响因子：
8.6
通讯作者：
A. Samizo;N. Kikuchi;Y. Aiura;K. Nishio;K. Mibu
中科院分区：
文献类型：
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作者：
A. Samizo;N. Kikuchi;Y. Aiura;K. Nishio;K. Mibu
价带极大值由S轨道组成的宽禁带氧化物是实现实用p型透明氧化物半导体所必需的。我们制备了一种新型的p型宽禁带氧化物SnNb2O6，其VBM由Sn5s轨道组成。为了讨论载流子的产生，我们通过控制热处理条件制备了p型和n型SnNb2O6。P型样品的载流子迁移率和密度分别为3.8×10-1cm2 V-1 S-1和3.7×1018 cm-3，n型样品的载流子迁移率和密度分别为9.9cm2 V-1 S-1和7.5×1015 cm-3。SnNb2O6长石的晶体结构由两种类型的交替层组成，即Sn八面体和Nb2O6八面体，其中存在三个不等价的氧位。SnNb2O6化学式中的六个氧成对分布在三个位置，其中三个不等价位置的氧被命名为O_1-O_3。空穴和电子载流子被认为是由Sn4+-On-Nb5+取代缺陷(SnNb‘)和O_1和O_2空位产生的.
Wide-gap oxides with their valence band maximum (VBM) composed of s orbitals are essential for realizing practical p-type transparent oxide semiconductors. We prepared a new p-type wide-gap oxide, SnNb2O6 foordite, with its VBM composed of Sn 5s orbitals. To discuss carrier generation, we prepared both p-type and n-type SnNb2O6 by controlling the annealing conditions. The carrier mobility and density were 3.8 × 10–1 cm2 V–1 s–1 and 3.7 × 1018 cm–3, respectively, for the p-type sample and 9.9 cm2 V–1 s–1 and 7.5 × 1015 cm–3, respectively, for the n-type sample. The crystal structure of SnNb2O6 foordite consists of two types of alternating layers, Sn and Nb2O6 octahedra, where three nonequivalent oxygen sites exist. Six oxygens in the chemical formula of SnNb2O6 are distributed at the three sites in pairs, where the oxygens in three nonequivalent sites were named O1–O3. Hole and electron carriers were considered to be generated by Sn4+-on-Nb5+ substitutional defects (SnNb′) and oxygen vacancies of O1 and O2...