Interstitial injection during oxidation of very low energy nitrogen-implanted silicon
Interstitial injection during oxidation of very low energy nitrogen-implanted silicon
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DOI：
10.1016/j.mseb.2005.08.028
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发表时间：
2005-12
影响因子：
3.6
通讯作者：
D. Skarlatos;C. Tsamis;M. Perego;M. Fanciulli;D. Tsoukalas
中科院分区：
文献类型：
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作者：
D. Skarlatos;C. Tsamis;M. Perego;M. Fanciulli;D. Tsoukalas
