High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology
High frequency capacitive micromechanical resonators with reduced motional resistance using the HARPSS technology
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DOI：
10.1109/smic.2004.1398189
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发表时间：
2004-09
期刊：
影响因子：
--
通讯作者：
S. Pourkamali;Farrokh Ayazi
中科院分区：
文献类型：
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作者：
S. Pourkamali;Farrokh Ayazi
该论文报告了具有降低运动阻力的厚体模式 VHF 电容盘谐振器的实现和表征。使用 3 掩模 HARPSS-on-SOI 工艺在绝缘体上硅衬底上制造厚度分别为 18 /spl mu/m 和 10 /spl mu/m 以及电容间隙分别为 160 nm 和 75 nm（间隙纵横比 >130）的单晶硅 (SCS) 侧支撑盘谐振器。与之前的薄型 VHF SCS 谐振器相比，证明了超过 20/spl 倍/更低的运动阻力和更大的信噪比，这是由于新的谐振器设计增加了电极数量和更大的器件厚度。厚盘谐振器在 150-230 MHz 谐振频率下的品质因数约为 30,000 至 50,000。测量数据与理论值非常吻合。
The paper reports on the implementation and characterization of thick bulk mode VHF capacitive disk resonators with reduced motional resistance. Single crystal silicon (SCS) side-supported disk resonators with thickness of 18 /spl mu/m and 10 /spl mu/m and capacitive gaps of 160 nm and 75 nm, respectively (gap aspect-ratio>130), are fabricated on silicon-on-insulator substrates using a 3-mask HARPSS-on-SOI process. Over 20/spl times/ lower motional resistance and larger signal-to-noise ratio compared to the previous thin VHF SCS resonators is demonstrated, resulting from the new resonator design with increased number of electrodes and larger device thickness. Quality factors in the order of 30,000 to 50,000 at resonant frequencies of 150-230 MHz are demonstrated for the thick disk resonators. The measured data is in excellent agreement with the theoretical values.