Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates
Molecular beam epitaxy as a method for the growth of freestanding zinc-blende (cubic) GaN layers and substrates
复制标题
DOI：
10.1116/1.3276426
复制
发表时间：
2010-03
期刊：
影响因子：
--
通讯作者：
S. Novikov;N. Zainal;A. Akimov;C. R. Staddon;A. Kent;C. T. Foxon
中科院分区：
文献类型：
--
作者：
S. Novikov;N. Zainal;A. Akimov;C. R. Staddon;A. Kent;C. T. Foxon
研究了等离子体辅助分子束外延(PA-MBE)生长闪锌矿(立方)GaN体层的过程。他们已经确定，在富Ga的条件下，通过引发可以获得独立的闪锌矿GaN的最佳结构性能，但不会形成Ga液滴。闪锌矿GaN的生长很难启动，但在没有纤锌矿夹杂物的情况下，更难在厚层中维持纯闪锌矿多晶型的生长。为了生长高质量的独立立方GaN层，需要保持相同的生长条件约1周。在GaN层的前10μm处获得了质量最好的闪锌矿相GaN。作者从我们厚厚的块状GaN层中制备了闪锌矿GaN衬底，他们使用先前连接到GaAs衬底的一侧作为这些闪锌矿GaN衬底的外侧。他们通过生长闪锌矿GaN L证明了该工艺的可扩展性。
The authors have studied the growth of bulk, freestanding zinc-blende (cubic) GaN layers by plasma-assisted molecular beam epitaxy (PA-MBE). They have established that the best structural properties of freestanding zinc-blende GaN can be achieved with initiation under Ga-rich conditions but without Ga droplet formation. It is difficult to initiate the growth of zinc-blende GaN, but it is even more difficult to sustain the growth of the pure zinc-blende polytype in thick layers without any wurtzite inclusions. In order to grow high quality freestanding cubic GaN layers, it is necessary to maintain the same growth conditions for about 1week. The best quality zinc-blende phase GaN was achieved in the first 10μm of the GaN layers. The authors have produced zinc-blende GaN substrates from our thick bulk GaN layers and they used the side previously attached to the GaAs substrate as the episide of these zinc-blende GaN substrates. They have demonstrated the scalability of the process by growing zinc-blende GaN l...