Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO3/SrTiO3 Heterointerfaces
Modulated Transport Behavior of Two-Dimensional Electron Gas at Ni-Doped LaAlO3/SrTiO3 Heterointerfaces
复制标题
Ni掺杂LaAlO3/SrTiO3异质界面二维电子气的调制输运行为
DOI：
10.1021/acsami.7b11727
复制
发表时间：
2017
影响因子：
9.5
通讯作者：
Jin Kexin
中科院分区：
文献类型：
--
作者：
Yan Hong;Zhang Zhaoting;Wang Shuanhu;Zhang Hongrui;Chen Changle;Jin Kexin
二维电子气输运行为的调制对于下一代多功能氧化物电子学的应用具有重要意义。本文研究了通过Ni掺杂和光照修饰的LaAlO 3/SrTiO 3异质界面的输运行为。在T < 40 K时，Ni掺杂使电阻显著增加，并观察到由近藤效应引起的电阻上升现象。在360 nm的光照射下，界面表现出持久的光电导性和抑制Kondo效应在低温下，由于通过photo-Hall方法测量的迁移率增加。此外，在T = 12 K时，随着Ni掺杂量的增加，光致界面电阻的相对变化从800%增加到6600%，这是由Ni掺杂引起的能带弯曲和晶格效应引起的。本工作为更好地控制复合氧化物异质界面的新兴特性铺平了道路，并将有助于基于全氧化物的光电器件应用。
Modulating transport behaviors of two-dimensional electron gases are of critical importance for applications of the next-generation multifunctional oxide electronics. In this study, transport behaviors of LaAlO3/SrTiO3heterointerfaces modified through the Ni dopant and the light irradiation have been investigated. Through the Ni dopant, the resistances increase significantly and a resistance upturn phenomenon due to the Kondo effect is observed atT< 40 K. Under a 360 nm light irradiation, the interfaces exhibit a persistent photoconductivity and a suppressed Kondo effect at low temperature due to the increased mobility measured through the photo-Hall method. Moreover, the relative changes in resistance of interfaces induced by light are increased from 800 to 6600% atT= 12 K with increasing the substitution of Ni, which is discussed by the band bending and the lattice effect due to the Ni dopant. This work paves the way for better controlling the emerging properties of complex oxide heterointerfaces and would be helpful for photoelectric device applications based on all-oxides.