Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays
Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays
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3-D NAND 闪存阵列中高温阶段后的随机电报噪声增强
DOI：
10.1109/led.2022.3154432
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发表时间：
2022
影响因子：
4.9
通讯作者：
C. Monzio Compagnoni
中科院分区：
文献类型：
--
作者：
G. Malavena;Mattia Giulianini;L. Chiavarone;A. Spinelli;C. Monzio Compagnoni
在这封信中，我们提出了明确的实验证据证明，高温空闲/数据保留阶段引起的随机电报噪声（RTN）在3-D NAND闪存阵列的永久加剧。RTN强化的幅度被证明是强烈依赖于阈值电压水平上的细胞度过的高温阶段，并独立的NAND串的backpattern。解释的效果在高温阶段期间的存储器单元的多晶硅沟道的晶界处的一些陷阱的去钝化方面，导致更强的不均匀性在沟道反转和更高数量的缺陷活跃在RTN过程中。所报告的现象表示一个额外的空闲/数据保留问题和另一个约束的3-D NAND闪存阵列的噪声裕度。
In this letter, we present clear experimental evidence proving that a high-temperature idle/data-retention phase gives rise to a permanent intensification of random telegraph noise (RTN) in 3-D NAND Flash arrays. The magnitude of RTN intensification is shown to be strongly dependent on the threshold-voltage level on which cells spent the high-temperature phase and to be independent of the backpattern of the NAND string. The effect is explained in terms of depassivation of some traps at the grain boundaries of the polysilicon channel of the memory cells during the high-temperature phase, leading to stronger nonuniformities in channel inversion and to a higher number of defects active in the RTN process. The reported phenomenology represents an addition idle/data-retention issue and another constraint to the noise margins of 3-D NAND Flash arrays.