Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
Acoustic phonon confinement in silicon nanolayers: Effect on electron mobility
复制标题
硅纳米层中的声声子限制：对电子迁移率的影响
DOI：
10.1063/1.2208849
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发表时间：
2006
影响因子：
3.2
通讯作者：
A. Godoy
中科院分区：
文献类型：
--
作者：
L. Donetti;F. Gámiz;J. Roldán;A. Godoy
我们证明了声子在超薄硅层中的约束，并研究了其对电子迁移率的影响。我们在理想的单层结构和更现实的三层结构中建立了一个受限制声子的模型。恢复声子量子化，计算不同声子模式的色散关系。这使我们能够获得受限制的声子散射率，并使用蒙特卡罗模拟计算绝缘体反转层上超薄硅中的电子迁移率。因此，将结果与体声子模型的结果进行比较，我们可以得出结论，如果我们想要重现纳米厚度硅层中电子传输的实际行为，那么在超薄器件的电子传输模拟中包含受限声子模型是非常重要的。
We demonstrate the confinement of acoustic phonons in ultrathin silicon layers and study its effect on electron mobility. We develop a model for confined acoustic phonons in an ideal single-layer structure and in a more realistic three-layer structure. Phonon quantization is recovered, and the dispersion relations for distinct phonon modes are computed. This allows us to obtain the confined phonon scattering rates and, using Monte Carlo simulations, to compute the electron mobility in ultrathin silicon on insulator inversion layers. Thus, comparing the results with those obtained using the bulk phonon model, we are able to conclude that it is very important to include confined acoustic phonon models in the electron transport simulations of ultrathin devices, if we want to reproduce the actual behavior of electron transport in silicon layers of nanometric thickness.