Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
Electrical and optical characteristics of AlAsSb/GaAsSb distributed Bragg reflectors for surface emitting lasers
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DOI：
10.1063/1.114882
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发表时间：
1995-11
影响因子：
4
通讯作者：
O. Blum;M. Hafich;J. Klem;K. Lear;S. Chu
中科院分区：
文献类型：
--
作者：
O. Blum;M. Hafich;J. Klem;K. Lear;S. Chu
We demonstrate an undoped 20 1/2 pair AlAsSb/GaAsSb distributed Bragg reflector (DBR) grown lattice matched to an InP substrate by molecular beam epitaxy. Reflectivity measurements indicate a stop band centered at 1.78 μm with a maximum reflectivity exceeding 99%. We also measure current–voltage characteristics in a similar 10 1/2 period p‐type DBR and find that a current density of 1 kA/cm2 produces a 2.5 V drop. Hole mobilities and doping concentrations in AlAsSb and GaAsSb are also reported.
