Lateral averaging effect on surface potential measurements on InAs dots studied by Kelvin probe force microscopy
Lateral averaging effect on surface potential measurements on InAs dots studied by Kelvin probe force microscopy
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通过开尔文探针力显微镜研究 InAs 点表面电势测量的横向平均效应
DOI:
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发表时间:
2004
期刊:
影响因子:
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通讯作者:
Takuji Takahashi
中科院分区:
文献类型:
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作者:
Shiano Ono;Takuji Takahashi