Enhanced Performance of Wideband Room Temperature Photodetector Based on Cd3As2 Thin Film/Pentacene Heterojunction
Enhanced Performance of Wideband Room Temperature Photodetector Based on Cd3As2 Thin Film/Pentacene Heterojunction
复制标题
基于 Cd3As2 薄膜/并五苯异质结的宽带室温光电探测器的增强性能
DOI：
10.1021/acsphotonics.8b00727
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发表时间：
2018
期刊：
影响因子：
7
通讯作者：
Jiang Yadong
中科院分区：
文献类型：
--
作者：
Yang Ming;Wang Jun;Han Jiayue;Ling Jiwei;Ji Chunhui;Kong Xiao;Liu Xianchao;Huang Zehua;Gou Jun;Liu Zhijun;Xiu Faxian;Jiang Yadong
三维Dirac半金属Cd3As2由于其高载流子迁移率和零带隙的优异特性，作为理想的候选光敏材料受到了广泛的关注。虽然基于cd3as2晶体材料的光电探测器已经研制成功，但cd3as2薄膜在商业器件中的应用仍具有巨大的意义。本文首次展示了一种基于cd3as2薄膜与并五苯异质结的宽带光电探测器。该光电探测器可以在室温下检测450 nm（可见光区）至10600 nm（长波红外区）的辐射波长，在650 nm处具有较高的电流响应率（36.15 mA/W）和7.29%的外量子效率，是以往报道的晶体cd3as2器件的6倍以上。最有趣的是，该探测器在10600 nm处的远红外电流响应率可达到1.55 mA/W，这是其他二维材料探测器所难以企及的。综上所述，基于cd3as2和并五烯复合薄膜的宽波长光电探测器具有优异的光电探测器器件应用性能。此外，cd3as2薄膜/五苯异质结在制造阵列器件方面具有优势，从而为薄膜光电探测器的应用提供了多种可能性。cd3as2薄膜和有机分子的使用为cd3as2材料的实际应用开辟了新的途径。
3D Dirac semimetal Cd3As2, as an ideal candidate photosensitive material, has attracted widespread attention due to its excellent characteristics of high carrier mobility and zero band gap. Although photodetector based on Cd3As2crystal material has been made, there are still huge significances for the utilization of Cd3As2thin film in commercial devices. In this paper, we demonstrated a wide-band photodetector based on heterojunction of Cd3As2thin film and pentacene for the first time. This photodetector can detect the radiation wavelength from 450 nm (visible region) to 10600 nm (long wave infrared region) at room temperature, exhibiting high current responsivity (36.15 mA/W) and external quantum efficiency (7.29%) at 650 nm, of whichRiis more than six times as high as previously reported that of crystalline Cd3As2devices. Most interestingly, the far-infrared current responsivity of this detector at 10600 nm can reach 1.55 mA/W, which is extremely difficult for other 2D material detectors. Overall, the wide-wavelength photodetector based on the combined film using Cd3As2and Pentacene is proved to possess superior performance for photodetector device application. Moreover, Cd3As2thin film/pentacene heterojunction has an advantage in the manufacturing array devices, thus providing various possibilities for application of thin-film photodetector. The use of Cd3As2thin film and organic molecules opens up a new path for the practical application of Cd3As2materials.