Very high frequency silicon nanowire electromechanical resonators
Very high frequency silicon nanowire electromechanical resonators
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DOI：
10.1021/nl0706695
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发表时间：
2007-07-01
期刊：
影响因子：
10.8
通讯作者：
Roukes, M. L.
中科院分区：
文献类型：
--
作者：
Feng, X. L.;He, Rongrui;Roukes, M. L.
我们展示了甚高频（VHF）纳米机械谐振器的基础上单晶硅纳米线（SiNWs），这是由自下而上的化学合成制备。工作在200 MHz附近的金属化SiNW谐振器实现了品质因数Q接近2000-2500。原始SiNW的基本谐振高达215 MHz，使用针对这些高阻器件优化的VHF读出技术进行测量。原始谐振器提供最高的Q值，对于80 MHz器件，Q值高达约13100。硅纳米线擅长质量传感;其质量响应度和频率稳定性的表征表明灵敏度接近10 zeptograms。这些硅纳米线谐振器在谐振传感、量子机电系统和高频信号处理方面具有重要的应用潜力。
We demonstrate very high frequency (VHF) nanomechanical resonators based upon single-crystal silicon nanowires (SiNWs), which are prepared by the bottom-up chemical synthesis. Metallized SiNW resonators operating near 200 MHz are realized with quality factor Q approximate to 2000-2500. Pristine SiNWs, with fundamental resonances as high as 215 MHz, are measured using a VHF readout technique that is optimized for these high resistance devices. The pristine resonators provide the highest Q's, as high as Q approximate to 13100 for an 80 MHz device. SiNWs excel at mass sensing; characterization of their mass responsivity and frequency stability demonstrates sensitivities approaching 10 zeptograms. These SiNW resonators offer significant potential for applications in resonant sensing, quantum electromechanical systems, and high frequency signal processing.