Electronic structure and energy band gap of poly (9,9-dioctylfluorene) investigated by photoelectron spectroscopy
Electronic structure and energy band gap of poly (9,9-dioctylfluorene) investigated by photoelectron spectroscopy
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DOI：
10.1063/1.126713
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发表时间：
2000-06
影响因子：
4
通讯作者：
L. Liao;M. Fung;Chun‐Sing Lee;S. Lee;M. Inbasekaran;E. Woo;Weishi Wu
中科院分区：
文献类型：
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作者：
L. Liao;M. Fung;Chun‐Sing Lee;S. Lee;M. Inbasekaran;E. Woo;Weishi Wu
用紫外光电子能谱(UPS)和X射线光电子能谱(XPS)研究了镀金硅衬底上聚(9，9-二辛基荧烯)(PFO)薄膜的电子结构。由UPS测量得到了PFO薄膜的电离势，Ip=5.60±0.05 eV。根据C1S芯能级的XPS振荡峰，我们估算了薄膜的电子能隙，Eg=3.10±0.10 eV。通过比较Eg和光学吸收带隙，发现Eg的值更接近于光吸收极大值，而不是接近光吸收边。因此，我们认为在估算Eg时，光吸收极大值可能是比光吸收边更好的近似值。
The electronic structure of poly (9,9-dioctylfluorene) (PFO) film on a Au-coated Si substrate was investigated by ultraviolet photoelectron spectroscopy (UPS) and x-ray photoelectron spectroscopy (XPS). From the UPS measurement, we obtained the ionization potential (Ip) of the PFO film, Ip=5.60±0.05 eV. From the XPS shake-up peaks of the C1s core level, we estimated the electron energy band gap (Eg) of the film, Eg=3.10±0.10 eV. By comparing the Eg with the optical absorption gap, we found that the value of Eg is closer to the optical absorption maximum than to the optical absorption edge. Therefore, we suggest that the optical absorption maximum may be a better approximation than the optical absorption edge in estimating Eg.