The sources for contaminants in the trace analysis of carbon in GaAs by secondary ion mass spectrometry
The sources for contaminants in the trace analysis of carbon in GaAs by secondary ion mass spectrometry
复制标题
二次离子质谱法痕量分析砷化镓中碳的污染物来源
DOI:
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发表时间:
1988
期刊:
影响因子:
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通讯作者:
K. Ishida
中科院分区:
文献类型:
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作者:
J. Kobayashi;M. Nakajima;K. Ishida
We have studied the sources for contaminants in the trace analysis of carbon in GaAs by secondary ion mass spectrometry (SIMS). The results suggest that the detectivity of carbon is mainly limited by the ionization of carbon‐containing molecules in the residual gases by the primary ion beam and/or the memory effect rather than the deposition of these molecules onto the sample surface. The model for the quantitative analysis of carbon in GaAs by SIMS is presented. The detection limit of carbon is (1–2)×1015 cm−3. The possibility is also presented to achieve the detection limit of middle 1014 cm−3 by SIMS even at the conventional vacuum pressure (∼1×10−9 Torr).We have studied the sources for contaminants in the trace analysis of carbon in GaAs by secondary ion mass spectrometry (SIMS). The results suggest that the detectivity of carbon is mainly limited by the ionization of carbon‐containing molecules in the residual gases by the primary ion beam and/or the memory effect rather than the deposition of these molecules onto the sample surface. The model for the quantitative analysis of carbon in GaAs by SIMS is presented. The detection limit of carbon is (1–2)×1015 cm−3. The possibility is also presented to achieve the detection limit of middle 1014 cm−3 by SIMS even at the conventional vacuum pressure (∼1×10−9 Torr).