Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition
Structural and photo-luminescence properties of nanocrystalline silicon films deposited at low temperature by plasma-enhanced chemical vapor deposition
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DOI：
10.1016/j.apsusc.2006.01.064
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发表时间：
2006-11
影响因子：
6.7
通讯作者：
A. Ali;T. Inokuma;S. Hasegawa
中科院分区：
文献类型：
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作者：
A. Ali;T. Inokuma;S. Hasegawa
使用 SiH4/H2/SiF4 混合物，在不同的动态压力 (Pg)、氢气流量 ([H2]) 和射频功率下，通过等离子体增强化学气相沉积方法在低于 220°C 的沉积温度下制备纳米晶硅 (nc-Si) 薄膜。我们检查了光致发光（PL）光谱和结构特性。我们观察到两个较强和较弱的 PL 光谱，峰值能量分别约为 EPL=1.8 和 2.2-2.3eV，表明第一个谱带与薄膜中的纳米结构有关，另一个谱带与 SiO2 相关键相关。在高[H2]和/或低压值下获得了具有相当大PL强度的nc-Si薄膜，然而，[H2]的效果可能与Pg的效果不同。随着Pg的增加，平均晶粒尺寸(δ)和结晶体积分数(ρ)先快速增加，然后缓慢增加。其他参数表现出与 δ 或 ρ 相反的行为。这些结果与 PL 特性随沉积条件变化的变化进行了讨论。
Nanocrystalline silicon (nc-Si) films were prepared by a plasma-enhanced chemical vapor deposition method at a deposition temperature below 220°C with different dynamic pressures (Pg), hydrogen flow rates ([H2]), and RF powers, using SiH4/H2/SiF4mixtures. We examined the photo-luminescence (PL) spectra and the structural properties. We observed two stronger and weaker PL spectra with a peak energies around EPL=1.8 and 2.2–2.3eV, respectively, suggesting that the first band was related to nanostructure in the films, and another band was associated with SiO-related bonds. The nc-Si films with rather large PL intensity was obtained for high [H2] and/or low pressure values, However, effects of [H2] are likely to be different from those of Pg. The average grain size (δ) and the crystalline volume fraction (ρ) at first rapidly increase, and then slowly increase, with increasing Pg. Other parameters exhibited opposite behaviors from those of δ or ρ. These results were discussed in connection with the changes in the PL properties with varying the deposition conditions.