Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron microscopy
Microstructure of In0.20Ga0.80N nanowires on Si (111) substrate evaluated by aberration-corrected scanning transmission electron microscopy
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通过像差校正扫描透射电子显微镜评估 Si (111) 衬底上 In0.20Ga0.80N 纳米线的微观结构
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
and H. Amano
中科院分区：
文献类型：
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作者：
M. Imura;R. G. Banal;Y. Koide;Y. Nakayama;M. Takeguchi;S. Mizutani;T. Tabata;S. Nakagawa;Y. Honda;M. Yamaguchi;and H. Amano
