Growth and characterization of short-period InAs/GaSb superlattice photoconductors
Growth and characterization of short-period InAs/GaSb superlattice photoconductors
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DOI：
10.1117/12.791978
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发表时间：
2008-09
期刊：
影响因子：
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通讯作者：
Jie Guo;Weigo Sun;Ying-qiang Xu;Zhiqiang Zhou;Zhichuan Niu
中科院分区：
文献类型：
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作者：
Jie Guo;Weigo Sun;Ying-qiang Xu;Zhiqiang Zhou;Zhichuan Niu
采用分子束外延技术在半绝缘的GaAs衬底上生长了基于短周期II型超晶格(SLS)、InAs(2ml)/GaSb(8ml)和InAs(8ml)/GaSb(8ml)的中短波红外探测器。生长了界面失配模AlSb量子点层和厚GaSb层作为缓冲层。室温光透射谱在~2μm和~5μm处有明显的吸收边，77K时两种光导体的50%截止波长分别为2.1μm和5.0 5μm。在77K时，黑体探测率超过2×108cmHz1/2/W，室温下黑体探测率超过1×108cmHz1/2/W，偏压为8V/cm。
The short- and mid-wavelength infrared detectors based on short period type II superlattices (SLs) InAs (2ML) / GaSb (8ML) and InAs (8ML) / GaSb (8ML) were grown by molecular-beam epitaxy on semi-insulating GaAs substrates. An interfacial misfit mode AlSb quantum dot layer and a thick GaSb layer were grown as buffer layers. Room-temperature optical transmittance spectra showed clear absorption edge at ~2μm and ~5μm. The 50% cutoff wavelength of the two photoconductors was 2.1μm and 5.05μm in photoresponse at 77K respectively. The blackbody detectivity was beyond 2×108 cmHz1/2/W at 77K and 1×108 cmHz1/2/W at room temperature with 8 V/cm bias.