Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
Optical gain improvement in type-II InGaN/GaNSb/GaN quantum well structures composed of InGaN/and GaNSb layers
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DOI：
10.1063/1.3300840
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发表时间：
2010-02
影响因子：
4
通讯作者：
Seoung-Hwan Park;D. Ahn;B. Koo;J. Oh
中科院分区：
文献类型：
--
作者：
Seoung-Hwan Park;D. Ahn;B. Koo;J. Oh
利用多带有效质量理论研究了II型InGaN/GaNSb量子阱(QW)结构的光学增益特性。这些结果与传统 InGaN/GaN QW 结构的结果进行了比较。跃迁波长随着GaNSb层中Sb成分的增加而迅速增加，而对InGaN层中In成分的敏感度较低。因此，与传统的I型InGaN/GaN QW结构相比，通过控制Sb成分可以容易地获得具有相对较低In成分的更长波长QW结构。在载流子密度研究范围内，II 型 QW 结构的光学增益和微分增益 (dg/dn) 远大于传统 QW 结构。这是由于有效阱宽度的减小以及光学矩阵元件的增加所致。
Optical gain characteristics of type-II InGaN/GaNSb quantum well (QW) structure are investigated by using the multiband effective mass theory. These results are compared with those of conventional InGaN/GaN QW structures. The transition wavelength rapidly increases with increasing the Sb composition in GaNSb layer while it is less sensitive to the In composition in InGaN layer. Hence, longer wavelength QW structures with a relatively lower In composition can be easily obtained by controlling Sb composition, compared to the conventional type-I InGaN/GaN QW structures. The optical gain and the differential gain (dg/dn) of a type-II QW structure are shown to be much larger than that of a conventional QW structure in an investigated range of carrier densities. This is due to the reduction in the effective well width, in addition to the increase in the optical matrix element.