CF4 plasma treatment on nanostructure band engineered Gd2O3-nanocrystal nonvolatile memory
CF4 plasma treatment on nanostructure band engineered Gd2O3-nanocrystal nonvolatile memory
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DOI：
10.1063/1.3556761
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发表时间：
2011-03
影响因子：
3.2
通讯作者：
J. Wang;Chih-Ting Lin
中科院分区：
文献类型：
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作者：
J. Wang;Chih-Ting Lin
研究了CF_4等离子体处理对Gd_2O_3记忆（NC）的影响。对于材料分析，进行二次离子质谱和X射线光电子能谱分析，以表征Gd 2 O3-NC膜的氟深度分布。此外，紫外-可见分光光度计被用来获得的Gd 2 O3的带隙和分析，建议修改后的能带结构。此外，电性能，包括存储器窗口，编程/擦除速度，电荷保持，和耐久性特性显着改善取决于CF 4等离子体处理条件。这可以通过基于Gd 2 O3纳米结构中的内建电场的物理模型来解释。然而，据观察，太多的CF 4等离子体引起的等离子体损伤引起的大的表面粗糙度，导致特性退化。通过适当的CF 4等离子体处理，这种Gd_2O_3-NC存储器可以应用于未来的非易失性存储器。
The effects of CF4 plasma treatment on Gd2O3 nanocrystal (NC) memory were investigated. For material analysis, secondary ion mass spectrometry and x-ray photoelectron spectroscopy analyses were performed to characterize the fluorine depth profile of the Gd2O3-NC film. In addition, an UV–visible spectrophotometer was used to obtain the Gd2O3 bandgap and analyzed to suggest the modified structure of the energy band. Moreover, the electrical properties, including the memory window, program/erase speed, charge retention, and endurance characteristics were significantly improved depending on the CF4 plasma treatment conditions. This can be explained by the physical model based on the built-in electric field in the Gd2O3 nanostructure. However, it was observed that too much CF4 plasma caused large surface roughness induced by the plasma damage, leading to characteristics degradation. It was concluded that with suitable CF4 plasma treatment, this Gd2O3-NC memory can be applied to future nonvolatile memory applic...