Composition-Dependent Growth Dynamics of Slectively Grown InGaAs Nanowires
Composition-Dependent Growth Dynamics of Slectively Grown InGaAs Nanowires
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选择性生长 InGaAs 纳米线的成分依赖性生长动力学
DOI：
10.1088/2053-1591/1/1/015036
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发表时间：
2014
影响因子：
2.3
通讯作者：
J. Motohisa
中科院分区：
文献类型：
--
作者：
Y. Kohashi;S. Hara;J. Motohisa
采用无催化剂选择性区域金属有机气相外延方法在1−x GaxAs纳米线中生长了富镓(x>；0.50)和富铟(x<；0.50)As纳米线，并比较了它们的生长动力学随V/III比的变化。研究发现，In 1−x Gax As纳米线的生长动力学明显依赖于合金成分x。具体而言，对于富镓纳米线的生长，纳米线的轴向生长速率最初随着V/III比的降低而增加，然后当V/III比继续降低到某一临界值时开始下降。另一方面，富铟纳米线的轴向生长速率随着V/III比的降低而单调下降。此外，对于富镓纳米线的生长，合金成分强烈依赖于V/III比，而对于富铟纳米线的生长，合金成分相对独立于V/III比。讨论了富镓和富铟InAs纳米线生长动力学随V/III比变化的原因，认为这是由于GaAs和InAs的本质不同所致。我们的发现为精确控制适用于未来基于纳米线的电子产品的纳米线的直径、高度和合金成分提供了重要的指导方针。
We grew gallium-rich (x> 0.50) and indium-rich (x< 0.50) In 1− x Ga x As nanowires by catalyst–free selective-area metal–organic vapor-phase epitaxy (SA-MOVPE), and compared their growth dynamics dependence on V/III ratio. It was found that the growth dynamics of In 1− x Ga x As nanowires is clearly dependent on the alloy composition x. Specifically, for gallium–rich nanowire growth, the axial growth rate of nanowires initially increased with decreasing V/III ratio, and then started to decrease when the V/III ratio continued to decrease below a critical value. On the other hand, axial growth rate of indium-rich nanowires monotonically decreased with decreasing V/III ratio. In addition, the alloy composition was strongly dependent on the V/III ratio for gallium-rich nanowire growth, while it was relatively independent of the V/III ratio for indium-rich nanowire growth. We discuss the origin of dissimilarity in the growth dynamics dependence on V/III ratio between gallium-rich and indium-rich InGaAs nanowire growth, and conclude that it is due to the inherent dissimilarity between GaAs and InAs. Our finding provides important guidelines for achieving precise control of the diameter, height, and alloy composition of nanowires suitable for future nanowire-based electronics.