Electronic structures and the estimated Curie temperatures of (Ga1−yIny)1−xMnxAs
Electronic structures and the estimated Curie temperatures of (Ga1−yIny)1−xMnxAs
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(Ga1−yIny)1−xMnxAs 的电子结构和估计居里温度
DOI:
10.1063/1.1638632
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发表时间:
2003
影响因子:
4
通讯作者:
T. Ami
中科院分区:
文献类型:
--
作者:
K. Miura;M. Iwasawa;S. Imanaga;T. Ami
The electronic structures of (Ga1−yIny)1−xMnxAs have been investigated using the Korringa, Kohn and Rostoker (KKR) method with the coherent potential approximation (CPA). The estimated Curie temperature (TC) of Ga1−xMnxAs is higher than that of (Ga0.5In0.5)1−xMnxAs and In1−xMnxAs when x≲0.10. On the other hand, the estimated TC of Ga1−xMnxAs saturates with an increase of x when x≳0.05, but that of (Ga0.5In0.5)1−xMnxAs and In1−xMnxAs does not saturate even when x>0.10. These results are in good agreement with the previous experimental results. Our calculated results predict that the TC of (Ga0.5In0.5)1−xMnxAs and In1−xMnxAs will be higher than that of Ga1−xMnxAs when x≳0.10.
影响因子:
2.8
作者:
Katayama-Yoshida, H;Sato, K
通讯作者:
Sato, K