Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis
Aging Effect of a Cu(In,Ga)(S,Se)2 Absorber on the Photovoltaic Performance of Its Cd‐Free Solar Cell Fabricated by an All‐Dry Process: Its Carrier Recombination Analysis
复制标题
Cu(In,Ga)(S,Se)2吸收剂的老化对其全干法无镉太阳能电池光伏性能的影响：载流子复合分析
DOI：
10.1002/aenm.201902869
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发表时间：
2019
影响因子：
27.8
通讯作者：
T. Minemoto
中科院分区：
文献类型：
--
作者：
Jakapan Chantana;Takahito Nishimura;Y. Kawano;N. Suyama;A. Yamada;Y. Kimoto;T. Kato;H. Sugimoto;T. Minemoto
采用陈化的CIGSSe薄膜吸收体，采用全干法制备了无Cd、全干法CIGSSe太阳电池。老化的CIGSSe薄膜保存在≈200Pa氧分压的干燥器柜中，老化时间长达10个月。首次报道了老化CIGSSe薄膜随老化时间的延长而导致无镉和全干法CIGSSe太阳电池的光伏性能显著提高，而与碱处理无关。基于载流子复合分析，无Cd和全干工艺CIGSSe太阳电池界面和耗尽区的载流子复合速率由于避免了CIGSSe吸收层表面的溅射损伤而降低，这与老化时间增加后CIGSSe表面附近的强电子束感应电流信号相一致。结果表明，随着时效时间的延长，界面和近表面质量明显改善，这是由于Inx(O，S)y在CIGSSe表面附近自形成，起到了缓冲层的作用。最终，用老化的Cs处理的CIGSSe吸收体，老化10个月，实现了全干法制备的22.0%效率的无Cd CIGSSe太阳电池。
Cd‐free Cu(In,Ga)(S,Se)2 (CIGSSe) solar cells are fabricated by an all‐dry process (a Cd‐free and all‐dry process CIGSSe solar cell) with aged CIGSSe thin film absorbers. The aged CIGSSe thin films are kept in a desiccator cabinet under partial pressure of oxygen of ≈200 Pa for aging time up to 10 months. It is reported for the first time that aged CIGSSe thin film with increased aging time results in significant enhancement of photovoltaic performance of Cd‐free and all‐dry process CIGSSe solar cells, regardless of the alkali treatment. Based on carrier recombination analysis, carrier recombination rates at the interface and in the depletion region of the Cd‐free and all‐dry process CIGSSe solar cells are reduced owing to avoidance of sputtering damage on CIGSSe absorber surface, which is consistent with the strong electron beam‐induced current signal near CIGSSe surface after the increased aging time. It is implied that the interface and near‐surface qualities are clearly improved through the increased aging time, which is attributable to the self‐forming of Inx(O,S)y near CIGSSe surface, which acts as a buffer layer. Ultimately, the 22.0%‐efficient Cd‐free CIGSSe solar cell fabricated by all‐dry process is achieved with the aged Cs‐treated CIGSSe absorber with the aging time of 10 months.
影响因子：
2.8
作者：
Jackson, Philip;Hariskos, Dimitrios;Powalla, Michael
通讯作者：
Powalla, Michael