Lattice strains and polarized luminescence in homoepitaxial growth of a-plane ZnO
Lattice strains and polarized luminescence in homoepitaxial growth of a-plane ZnO
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DOI：
10.1063/1.4769036
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发表时间：
2012-12
影响因子：
4
通讯作者：
H. Matsui;H. Tabata
中科院分区：
文献类型：
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作者：
H. Matsui;H. Tabata
通过改变衬底类型和生长条件，在a面氧化锌（ZnO）同质外延层中选择性地引入面内晶格应变。当使用Crystec ZnO衬底时，观察到无应变层，这导致原子级平坦表面，具有由原子级m面（10-10）组成的纳米小面。与此相反，在Goodwill ZnO衬底上的ZnO层由于产生基面层错而具有面内晶格应变。氧分压的变化系统地改变了晶格应变的程度，阐明了光致发光（PL）偏振与晶格应变之间的密切关系。随着晶格应变的增加，PL的偏振比增加。
In-plane lattice strains in a-plane zinc oxide (ZnO) homoepitaxial layers were selectively introduced by changing substrate type and growth conditions. Strain-free layers were observed when using a Crystec ZnO substrate, which resulted in atomically flat surfaces with nano-facets consisting of the m-plane (10-10) at atomic scale. In contrast, ZnO layers on Goodwill ZnO substrates possessed in-plane lattice strains due to generation of basal-plane stacking faults. The degree of lattice strains was systematically changed by the oxygen pressure, which clarified the close correlation between photoluminescence (PL) polarization and lattice strains. The polarization ratio of PL enhanced with the lattice strains.